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Semiconductors and Semimetals, Volume 111 highlights new advances in the field, with this new volume presenting interesting chapters on;
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phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related;
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The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural;
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Acclaimed by Nature as "an ideal text," this extensive survey provides coverage of defects in nonmetals, emphasizing point defects and;
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For senior/graduate courses in Digital Signal Processing. This text offers students a hands-on approach to understanding architecture and;
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Point Defects in Group IV Semiconductors is een boek van Sergio Pizzini;
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comprehensive account of all fundamental physical properties of skutterudites * Each major topic is accompanied by introductory sections and a further;
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Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides presents diagrams and numerical data of important;
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atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed;
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in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group;
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;
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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a;
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dynamics; and GaN bulk and nanostructures for spintronic application.;
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, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic;
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fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide;
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Thermoelectricity and Advanced Thermoelectric Materials reviews emerging thermoelectric materials, including skutterudites, clathrates;
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to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and;
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to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and;
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point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical;
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point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical;
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advanced topics in GAN Demonstrates GANs for a wide variety of applications, including image generation, Big Data and data analytics;
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This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and;
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of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and;
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Understand the common architecture for each of the GAN models you will build Implement different GAN architectures in TensorFlow and Keras Use;
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defects, such as hernias, enterocutaneous or entero-atmospheric fistulae, and indications for and surgical techniques used to reconstruct the;
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Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth;
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