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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints

unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend;

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Nano-CMOS Gate Dielectric Engineering

of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text;

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Analog Electronic Circuit

, bipolar junction transistors, field-effect transistors (FETs), operational amplifiers, power amplifiers, and feedback circuits. With abundant;

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Field Effect Transistors Comprehensive

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This;

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Compact Models for Integrated Circuit Design

-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses;

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Compact Models for Integrated Circuit Design

), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical;

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Physics of Semiconductor Devices 4e

-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors;

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Fundamentals Of Iii-V Devices

(HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high;

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Handbook for III-V High Electron Mobility Transistor Technologies

of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key;

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High-k Gate Dielectrics for CMOS Technology

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

concerns for high-kmetal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces;

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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications

concerns for high-kmetal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces;

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Integrated Power Devices and TCAD Simulation

-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;

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Integrated Power Devices and TCAD Simulation

-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction;

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Short-Channel Organic Thin-Film Transistors

This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature;

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Semiconductor Devices

diodes, bipolar junction transistors, high frequency transistors, field-effect transistors and power supplies in detail. Salient features;

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Ferroelectrics

insulator semiconductor field effect transistors; resonant and non-resonant microwave absorption studies in multiferroic materials; the nanoscale;

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Basic Electronics

junction gate field-effect transistor, silicon controlled rectifier and operational amplifier. Two separate chapters on Introduction to;

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Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs;

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The Fundamentals of Electrical Engineering

-effect transistors. Finally, a short introduction to the important field of circuit simulation completes the book. The latest vehicles are;

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Transistors

properties and self-consistent simulations of carbon nanotubes in transistor technology; the future developments in the nanowire field-effect;

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Radio Frequency Transistors

and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth;

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Hf-based High-k Dielectrics

In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard;

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High-k Gate Dielectric Materials

high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications;

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Junctionless FieldEffect Transistors

versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs;

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Radio Frequency Transistors

satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical;

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Semiconductor Devices for High-Speed Optoelectronics

(heterostructure field-effect and bipolar transistors) and passive components (lumped and distributed) for high-speed electronic integrated circuits. It;

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