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Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third;
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of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought;
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of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought;
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and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact;
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of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts;
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of MOS and bipolar physics.* Covers IGBT operation, device and process design, power modules, and new IGBT structures.;
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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling;
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gates ...arithmetics...sequential cell design...and analog basic cells. The book also presents design rules, Microwind program operation and;
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typical home-in personal computers, automobiles, appliances, and toys-are almost all derive from MOS transistors. To the Digital Age examines for;
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-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction;
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of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key;
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Principles of Electric Machines and Power Electronics, Third Edition combines the traditional areas of electric machinery with the latest;
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and design examples to illustrate the concepts. This third edition includes two additional chapters on power amplifiers and power supplies;
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and design examples to illustrate the concepts. This third edition includes two additional chapters on power amplifiers and power supplies;
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The Electric Power Engineering Handbook, Third Edition updates coverage of recent developments and rapid technological growth in crucial;
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understanding of the latest low voltage and low power (LV/LP) techniques, one of the most promising of which makes use of the floating gate MOS (FGMOS;
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challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces;
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development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs;
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analysis of induction generators. New to the Third Edition Revised equations and mathematical modeling Addition of solved problems as;
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simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;
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simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents;
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1993 Second edtion, third printing ;
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analysis of induction generators. New to the Third Edition Revised equations and mathematical modeling Addition;
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The scope of this book covers the modeling and forecast of renewable energy and operation and planning of power system with renewable;
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The scope of this book covers the modeling and forecast of renewable energy and operation and planning of power system with renewable;
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step-by-step manner for more clarity and understanding to the readers. It covers electronic circuits like rectifiers, RC filters, transistor;
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