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electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;
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electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;
Vergelijkbare producten zoals Nitride Wide Bandgap Semiconductor Material and Electronic Devices
-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for;
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and devices; quantum dot structures and devices; progress in semiconductor materials - quantum dots, growth and magnetism; terahertz materials;
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III-Nitride Semiconductor Optoelectronicscovers the latest breakthrough research and exciting developments in the field of III-nitride;
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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding;
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The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as;
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semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a;
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of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current;
Vergelijkbare producten zoals Gallium Nitride Gan
of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current;
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. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin;
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Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent;
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in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium;
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lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the;
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the electronic devices. Section 5 describes about semiconductor structures for optoelectronic applications. Provide the reader with the;
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engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double;
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engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double;
Vergelijkbare producten zoals Integrated Power Devices and TCAD Simulation
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic;
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and;
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semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the;
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semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE;
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why;
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This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International;
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Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow;
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The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor;
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This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium;
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. Highlights of the subjects covered include label-free biosensing with: * semiconductor field-effect devices such as nanomaterial-modified;
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