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Effective Electron Mass in Low-Dimensional Semiconductors

-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV;

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Fowler-Nordheim Field Emission

considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium;

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Sic Materials And Devices - Volume 1

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The;

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Polycrystalline & Spatially Non-Homogeneous Amorphous Semiconductors & Insulators

This book is devoted to experimental and theoretical investigations on intimate interrelations between morphology, intra-gap and near-band;

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Porous Silicon Carbide and Gallium Nitride

and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide;

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Advances in Materials Science Research

ternary photonic band gap material structure for use in temperature unstable environments; the effect of temperature variation on transmission;

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Das mittelhochdeutsche Handwoerterbuch von Matthias Lexer

Handworterbuch von 1974 besteht aus drei Banden: Band I befasst sich mit den Stichwortern von A-M, Band II mit N-U und Band III mit den Begriffen von V/F;

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Quantum Effects, Heavy Doping, And The Effective Mass

nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium;

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Shakespeares Dramatische Werke

Shakespeares dramatische Werke in der Ubersetzung von Schlegel und Tieck, dritter und vierter Band, Konigsdramen III und Tragodien I und II.";

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Deutsche Verfassungs- und Rechtsgeschichte

Band der Ergebnisse: 36 Seiten, 2015 (strafrechtlich bis 1871 bzw. 1879) Band I (2. Auflage 2007, ISBN: 978-3-8334-7033-2) und Band II (2;

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Basic Semiconductor Physics

, quantum well and HEMT structures including wideband gap materials such as GaN and SiC in addition to IV and III-V semiconductors. The updated;

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Dispersion Relations in Heavily-Doped Nanostructures

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP;

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Europarecht: Dogmatik im Kontext. Band II

Band II des Lehrbuchs zum Europarecht folgt der Konzeption einer kontextorientierten Vermittlung und Analyse des Europarechts, die fur ein;

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Iii . BUDOS BAND, CD

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Wide Band Gap Semiconductor Nanowires Fo

in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.;

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Iii-nitride Semiconductor Materials

III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and;

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Microwave Solid State Circuit Design

including fabrication technologies.* Includes a treatment of heterostructure and wide-band gap devices.* Examines compact and low cost circuit;

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Phononic Crystals

complex band structures, local resonance, dispersion and negative refraction, and phononic band gap guidance. The book is accompanied with a;

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Einde inhoud

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