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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors

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Handbook for III-V High Electron Mobility Transistor Technologies

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details;

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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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Electron Gas

-emitting diodes with tunneling-junction-induced 2-D electron gas at an AlGaNGaN heterostructure, which is inserted in the middle of the P++-GaN;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Integrated Power Devices and TCAD Simulation

also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a;

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Advances in Applied Physics Research

in piezoelectric AlGaNGaN heterostructures; fluorescence resonance energy transfer between CdTe quantum dots and organic dye; and band offsets;

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Gallium Nitride Gan

serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it;

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Gallium Nitride (GaN)

serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it;

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AlGaN/GaN HEMTs Reliability

AlGaNGaN HEMTs Reliability is een boek van Cuvillier Verlag;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very;

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Power GaN Devices

fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach;

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Gan-based Materials And Devices

nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet;

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RF and Microwave Passive and Active Technologies

junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on;

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Properties, Processing and Applications of Gallium Nitride and Related Semi-Conductors

,and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave;

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Plasmaunterstutzte Molekularstrahlepitaxie von AlGaN/GaN-Heterostrukturen

Ziel dieser Arbeit ist die Herstellung hochqualitativer AlGaNGaN-Heterostrukturen mittels Molekularstrahlepitaxie (MBE) fur die Anwendung;

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Fundamentals Of Iii-V Devices

electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment;

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Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron;

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Molecular Simulation Studies in Material & Biological Sciences

specially developed high performance computing clusters over the world are performing molecular simulations or are aimed on these needs. This book;

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Junctionless FieldEffect Transistors

control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive;

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MRS Proceedings Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays

, electron microscopes, and other high-tech tools and applications. This book contains papers from two symposia held during the 2000 MRS Spring;

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Short-Channel Organic Thin-Film Transistors

This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature;

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Applications of Silicon-Germanium Heterostructure Devices

Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important;

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RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance;

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Multigroup Equations For The Description Of The Particle Transport In Semiconductors

-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors;

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