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Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes

This thesis evaluates the viability of ferroelectric Si: HfO2 and its derived FeFET application for non-volatile data storage. At the;

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Ferroelectricity in Doped Hafnium Oxide

and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile;

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CMOS Processors and Memories

carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored. CMOS Processors and Memories is divided into two parts;

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Materials Science and Technology for Nonvolatile Memories

increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book;

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Materials Science and Technology for Nonvolatile Memories

increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book;

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CMOS Low Power Analysis

of techniques to mitigate total leakage are closely examined. The result is guidelines for designing low-leakage circuits in nanometer technology nodes;

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Ferroic Materials for Smart Systems: From Fundamentals to Device Applications

acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. Ferroic Materials for Smart Systems;

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Variation-Aware Advanced CMOS Devices and SRAM

book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process;

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Random Telegraph Signals in Semiconductor Devices

of state-of-the-art and future CMOS technology nodes is dominated by RTS and single-trap phenomena, and so its understanding is of vital importance;

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Ferroelectric Gate Field Effect Transistor Memories

device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development;

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Novel Devices Based on Relaxor Ferroelectric PMN-PT Single Crystals

This book explores the applications of ferroelectric materials in information technology by developing several prototype devices based on;

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Novel Devices Based on Relaxor Ferroelectric PMN PT Single Crystals

This book explores the applications of ferroelectric materials in information technology by developing several prototype devices based on;

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Ferroelectric Perovskites for High-Speed Memory

This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After;

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Advances in Non-volatile Memory and Storage Technology

emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on;

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Intelligent Integrated Systems

for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are;

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Magnetic, Ferroelectric, and Multiferroic Metal Oxides

are used to make capacitors with high dielectric constant, transducers, and actuators, and in sensors, reed heads, and memories based on giant;

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Advances in Microelectronics & Photonics

developments in the semiconductor devices for future generation microelectronics and photonics technologies. It includes some advanced CMOS device;

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Advanced Nanoelectronics

An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will;

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Materials and Technology for Nonvolatile Memories

Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston;

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Scaling and Integration of High-Speed Electronics and Optomechanical Systems

technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche;

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Microelectronic Test Structures for CMOS Technology

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for;

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Nano-CMOS Design for Manufacturability

-CMOS Circuit and Physical Design, taking design to technology nodes beyond 65nm geometries. It is divided into three parts: Part One, Newly;

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Ferroelectrics: Principles and Applications

in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories. The first two;

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Nanoscale CMOS

modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap;

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Design of Terahertz CMOS Integrated Circuits for High-Speed Wireless Communication

-speed wireless links for the 5G and post-5G world. Transmitter and receiver integrated circuits based on CMOS, which has the ability to realize;

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Emerging Nanoelectronic Devices

each technology. Suggests guidelines for the directions of future development of each technology. Emphasizes physical concepts;

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Rad-hard Semiconductor Memories

Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a;

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