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DC, microwave, noise, and degradation properties of GaN based HEMTs

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GaN-Based Tri-Gate High Electron Mobility Transistors.

fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating;

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Handbook for III-V High Electron Mobility Transistor Technologies

followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaNGaN HEMTs. The book also provides;

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AlGaN/GaN HEMTs Reliability

AlGaNGaN HEMTs Reliability is een boek van Cuvillier Verlag;

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Power GaN Devices

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with;

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Handbook of RF and Microwave Power Amplifiers

transistor power amplifiers. A team of expert authors brings you up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN;

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RF and Microwave Semiconductor Device Handbook

level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and;

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and;

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High Performance Gan Light-Emitting Diode

The reliability of InGaNGaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device;

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High-Frequency GaN Electronic Devices

suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and;

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Iii-nitride Devices And Nanoengineering

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN;

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RF Technologies for Low Power Wireless Communications

coverage of:* Advanced GaAs-based HBT designs* InP-based devices and circuits* Si/SiGe HBT technology* Noise in GaN devices* Power amplifier;

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Noise Theory Of Linear And Nonlinear Circuits

electronics engineer or researcher specialising in communications and microwave engineering. This text provides a comprehensive overview of noise;

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Microwave Electronics

The development of high speed, high frequency circuits and systems requires an understanding of the properties of materials functioning at;

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Electrical Properties of n-GaN based MOS type Schottky Junctions

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One-Dimensional Microwave Photonic Crystals

Explores theoretical and experimental studies of the properties of one-dimensional photonic crystals. The authors also consider the;

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One-Dimensional Microwave Photonic Crystals

Explores theoretical and experimental studies of the properties of one-dimensional photonic crystals. The authors also consider the;

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The Design Of Modern Microwave Oscillators For Wireless Applications

current literature in the field concentrates on classic design strategies based on measurements, simulation, and optimization of output power and;

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Properties, Processing and Applications of Gallium Nitride and Related Semi-Conductors

market for such devices has rapidly expanded. Based on its outstanding properties, including a wide energy band gap, high thermal conductivity;

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Gallium Nitride

topics on the structure, thermal properties and applications of GaN. Some of these topics include the effects of radiation damage in GaN and and;

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Microwave and MM Wave Vacuum Electron Devices

types of microwave tubes, and despite competition from solid-state devices (those using GaN, SiC, et cetera), which continue to be used widely;

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Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation (Band 48

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Analysis and Design of Autonomous Microwave Circuits

facilitates a sound understanding of the free-running oscillation mechanism, the start-up from the noise level, and the establishment of the steady;

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Microwave Engineering

fundamentaltheory of radiation and propagation of electromagnetic waves, polarization, antenna properties, free space attenuation, atmospheric refractivity;

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Optical and Spectroscopic Properties of Glass

optical and optoelectronic devices. New glass forming systems and non-oxidic glasses have therefore been developed. F.X. Gan is head of Chinese;

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Gan and Related Alloys 1999

This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing;

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